∂f∂t=−∇⋅→S.
In a given volume, the rate of change of the number of particles,∂f∂t, is given by the numer of particles that across the surface enclosing the volume, assuming no source of particle is present.
→S is the streaming crrent density of particles across the surface.
→S = →Vf −K⋅∇f ∇p⋅→Sp=1p2∂∂p(p2⟨˙p⟩f) , →Sp=⟨˙p⟩f
∂f∂t+∇⋅(→Vf−K⋅∇f)+(1p2∂∂p(p2⟨˙p⟩f))=0
note. The streaming is included in →S.
adiabatic cooling resulting the average change in momentum is ⟨˙p⟩=−p3∇⋅→V.
∂f∂t+f∇⋅→V+→V⋅∇f−(∇⋅→V)3p2(3p2f+p3∂f∂p)=∂f∂t+f∇⋅→V+→V⋅∇f−(∇⋅→V)(f+p3∂f∂p)=∂f∂t+→V⋅∇f−(∇⋅→V)p3∂f∂p
note. dTdt=dpdtdTdp=−∇⋅→V3(p∗pT+m)=−(∇⋅→V)3T(T+2mT+m).dEdt=dpdtdEdp=−(∇⋅→V)3(pv)
When differential energy density, Up=4πp2f, is convected with velocity V, the flux observed is not VUp, but rather Sp=CVUp, where C=−13∂lnf∂lnp=−13pf∂f∂p is called the Compton-Getting coefficien.
For f=Ap−γ, C is γ3. if γ is 4.7, then the C is 4.7/3∼1.57.
The adiabatic rate of change of momentum ˙p=−(1/3)p∇⋅V referred to above, is actually the rate of change in the non-inertial frame. The rate in the stationary frame is ˙p=−(1/3)pV⋅(∇f/f).
Reference
Radiation Environments and Damage in Silicon Semiconductors Silicon chapter4
Cosmic-Ray Modulation Equations
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